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Electron spin resonance in As‐doped Ge in a wide range of impurity concentration
Author(s) -
Gershenzon E. M.,
Pevin N. M.,
Fogelson M. S.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490203
Subject(s) - impurity , electron paramagnetic resonance , laser linewidth , doping , excited state , conduction electron , electron , condensed matter physics , spin (aerodynamics) , atomic physics , range (aeronautics) , materials science , chemistry , analytical chemistry (journal) , thermal conduction , nuclear magnetic resonance , physics , optics , laser , organic chemistry , quantum mechanics , composite material , thermodynamics , chromatography
Electron spin resonance of As donors in Ge has been investigated in the impurity concentration range 1.5 × 10 15 to 2 × 10 19 cm −3 at temperatures from 1.7 to 4.2 °K. Impurity conduction in the same samples has been studied for N As ≦ 2 × 10 17 cm −3 . It is shown that the line‐narrowing in the concentration range 2 × 10 17 cm −3 ≧ N As ≧ 4 × 10 16 cm −3 with H 0 ∥ [100] orientation cannot be due to the electron motion over impurity centres. Exchange‐narrowing due to the formation of clusters has been discussed. The reduction of angular dependence of the linewidth Δ H with increasing temperature is ascribed to transitions into excited states, by which contributions from different valleys to g ‐factor are averaged. For highly doped samples the rate of intervalley transitions has been estimated from the data on angular dependence of Δ H .