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Energy loss of hot carriers due to optical phonons in degenerate nonpolar semiconductors
Author(s) -
Tschulena G. R.,
Keil R.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490118
Subject(s) - degenerate energy levels , degeneracy (biology) , semiconductor , phonon , relaxation (psychology) , condensed matter physics , germanium , physics , materials science , silicon , optoelectronics , quantum mechanics , biology , bioinformatics , neuroscience
An expression is derived for the average rate of energy loss of hot carriers scattered by optical phonons in degenerate nonpolar semiconductors. A discussion of the influence of degeneracy for the particular case of n‐type germanium is presented. The influence of degeneracy on the energy relaxation time is estimated.