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Conductivity and hall effect of heavily doped semiconductors at low temperatures in a weak magnetic field
Author(s) -
Van Cong H.,
Mesnard G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490117
Subject(s) - condensed matter physics , doping , semiconductor , magnetic field , feynman diagram , electron , path integral formulation , hall effect , field (mathematics) , magnetic semiconductor , conductivity , physics , function (biology) , materials science , quantum mechanics , mathematics , quantum , evolutionary biology , biology , pure mathematics
The transport coefficients of electrons at low temperatures in a weak magnetic field are calculated from a simplified model of heavily doped semiconductors. The treatment is based on the Green function methods, through Feynman path integral formulation, applied to disordered systems and developed already in two previous papers. Two typical cases concerning the relation between the carrier concentration and the donor one are discussed.