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Tunable stimulated spin‐flip raman scattering in InSb at various wavelengths
Author(s) -
Irslikger C.,
Grisar R.,
Wachernig H.,
Häfelf H. G.,
Smith S. D.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480239
Subject(s) - raman scattering , wavelength , x ray raman scattering , raman spectroscopy , scattering , materials science , spin flip , optics , optoelectronics , atomic physics , physics
Tunable stimulated spin‐flip Raman scattering from conduction electrons in InSb is investigated at four different pump wavelengths (10.6, 10.2, 5.3, 5.1 μm). The tunable frequency range of the Raman‐scattered radiation is increased. Output powers of the Raman‐scattered light as a function of input power densities and magnetic fields were measured for the mentioned pump wavelengths. Thresholds for stimulated scattering were determined. From these the gain factors were calculated. The expected resonance in the 5 μm region is seen in the results and leads to extremely low thresholds and high gain factors.