Premium
Exciton binding energies of layer‐type semiconductors GaSe and GaTe
Author(s) -
Grandolfo M.,
Gratton E.,
Somma F. Anfosso,
Vecchia P.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480231
Subject(s) - exciton , binding energy , semiconductor , biexciton , absorption edge , enhanced data rates for gsm evolution , layer (electronics) , absorption (acoustics) , materials science , condensed matter physics , atomic physics , band gap , optoelectronics , physics , nanotechnology , telecommunications , composite material , computer science
New experimental results are given on the absorption coefficient of GaSe and GaTe single crystals near the fundamental edge. A new analysis of the direct exciton region due to Sell and Lawaetz has been used to assign the energy position of the exciton levels and of the energy gaps, and to determine the exciton binding energies.