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Analysis of the two‐rand hall effect and magnetoresistance
Author(s) -
Kwan C. C. Y.,
Basinski J.,
Woolley J. C.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480228
Subject(s) - hall effect , electron , magnetoresistance , condensed matter physics , magnetic field , conduction band , maxima and minima , function (biology) , mathematics , variation (astronomy) , semiconductor , physics , mathematical analysis , quantum mechanics , evolutionary biology , biology , astrophysics
The variation of the values of Hall coefficient R and resistance ϱ as a function of magnetic field B is analysed for the case of an n‐type semiconductor with electrons in two different sets of conduction band minima. It is shown that both ϱ 0 /Δϱ and R 0 /Δ R should be linear functions of B −2 and that the parameters of the separate bands can be determined from the slope and intercept values of such graphs. The appropriate choice of experimental parameters to ensure the required accuracy of band parameters is discussed.