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Electronic specific heat of heavily doped semiconductors in a weak magnetic field
Author(s) -
van Cong H.,
Mesnard G.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480225
Subject(s) - doping , semiconductor , condensed matter physics , magnetic semiconductor , magnetic field , materials science , field (mathematics) , specific heat , function (biology) , engineering physics , physics , optoelectronics , mathematics , quantum mechanics , evolutionary biology , pure mathematics , biology
The electronic specific heat at low temperature, in a weak magnetic field, is calculated from a simplified model of heavily doped semiconductors. The treatment is based on the Green function methods applied to disordered systems developed in a previous paper. Two important cases concerning the relation between the carrier and the donor concentration are discussed.