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Calculation of density of states for crystalline and amorphous III‐V semiconductors
Author(s) -
Kramer B.,
Maschke K.,
Thomas P.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480221
Subject(s) - pseudopotential , amorphous solid , amorphous semiconductors , condensed matter physics , semiconductor , materials science , density of states , range (aeronautics) , band gap , short range order , physics , chemistry , crystallography , optoelectronics , composite material
The densities of states of crystalline and amorphous Gap, GaAs, GaSb, InP, InAs, and InSb have been calculated using the pseudopotential method and the complex band structure (CBS‐)method. The short range order of the amorphous structures has been taken into account by an approximative correlation function.

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