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High‐frequency conductivity of hot carriers in semiconductors with non‐parabolic dispersion law of energy
Author(s) -
Almasov L. A.,
Dykman I. M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480213
Subject(s) - condensed matter physics , isotropy , semiconductor , anisotropy , electric field , microwave , materials science , band gap , permittivity , electric susceptibility , permeability (electromagnetism) , conductivity , dispersion (optics) , optics , physics , dielectric , magnetic field , chemistry , polarization density , optoelectronics , quantum mechanics , biochemistry , magnetization , membrane
The tensor of microwave conductivity in semiconductors with isotropic non‐parabolic band in the presence of applied electric field has been calculated. Various frequency ranges of microwave field have been considered. The splitting of plasma frequencies in a constant field has been determined. It is shown that the tensor anisotropy of the dielectrical permeability obtained is manifested in the electro‐optical Kerr effect, observed in [6].