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Non‐equilibrium plasma in semiconductors with anisotropic band structure
Author(s) -
Dykman I. M.,
Tomchuk P. M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480212
Subject(s) - anisotropy , plasma , electric field , distribution function , condensed matter physics , semiconductor , plasma oscillation , physics , dispersion (optics) , field (mathematics) , scattering , constant (computer programming) , materials science , optics , quantum mechanics , mathematics , computer science , pure mathematics , programming language
Oscillations of the non‐equilibrium plasma in semiconductors with anisotropic band structure like p‐type Ge are studied. The non‐equilibrium of the plasma is caused by a sufficiently large external electric field. A high‐frequency contribution (due to the field of the oscillations) to the carrier distribution function is found from the kinetic equation taking account the scattering anisotropy and spatial dispersion. The dependences of the frequency and damping constant of the eigenoscillations on the magnitude and orientation of the constant field are determined. A summary of the results obtained and of the proposed experiments is given at the end of the paper.