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Influence of pressure on the mobility in heavily doped n‐type indium antimonide
Author(s) -
LitwinStaszewska E.,
Porowski S.,
Filipchenko A. A.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480208
Subject(s) - indium antimonide , doping , hydrostatic pressure , antimonide , impurity , materials science , indium , electrical resistivity and conductivity , condensed matter physics , hydrostatic equilibrium , analytical chemistry (journal) , chemistry , thermodynamics , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics
Abstract The resistivity ϱ of n‐type InSb doped with Te, Se, and S was measured as a function of the hydrostatic pressure up to 12 kbar, at 77 and 300 °K. We observed that samples doped with different impurities have different ϱ(P) dependences. The experimental results were compared with theoretical calculations based on the papers of Korenblit and Shestobitov [2] and Zawadzki and Szymańska [3]. The agreement between theory and experiment is good for Te‐doped samples and is highly unsatisfactory for S‐ and Se‐doped samples. It is suggested that the discrepancies of the latter are caused by the existence of short‐range potential centres in S‐ and Se‐doped samples.