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Studies of photoluminescence in GaAs 1−x P x mixed crystals
Author(s) -
Gaj J. A.,
Majerfeld A.,
Pearson G. L.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480207
Subject(s) - photoluminescence , acceptor , conduction band , luminescence , recombination , materials science , atmospheric temperature range , crystallography , analytical chemistry (journal) , chemistry , condensed matter physics , optoelectronics , physics , electron , biochemistry , gene , chromatography , quantum mechanics , meteorology
Photoluminescence measurements on GaAs 1−x P x single crystals were performed for the composition range 0.27 < x < 0.44 throughout the spectral region 0.6 < λ < 0.8 μm at temperatures between 5 and 125 °K. Four luminescence bands A, B, C, and D were found. The suggested identification is: B hand‐to‐band transitions, B and C conduction band‐to‐acceptor level transitions, and D distant donor‐acceptor pair recombination. The deep donor level, introduced by S in this composition range, was found to follow the indirect gap variation with composition.