Premium
Magnetic susceptibility of heavily doped semiconductors in a weak magnetic field
Author(s) -
van Cong H.,
Mesnard G.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480128
Subject(s) - condensed matter physics , doping , magnetic semiconductor , magnetic field , semiconductor , impurity , coulomb , cube root , cube (algebra) , materials science , physics , mathematics , electron , quantum mechanics , geometry
By Green function methods applied to disordered systems, the magnetic susceptibility of heavily doped semiconductors in a weak magnetic field is investigated. A simplified model is used in which the impurity potential is an attractive screened Coulomb potential and quantum exchange‐correlation effects can be neglected. Two important cases arc discussed with the present model. In the first one, we consider an ordinary n‐type semiconductor, assuming that the carrier concentration is equal to the donor one; in the second case, the carrier concentration rises as the cube root of the total concentration of impurities.