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Influence of impurities on the de haas‐van alphen effect II. Application to point defects in copper
Author(s) -
Hehl W.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480126
Subject(s) - copper , condensed matter physics , de haas–van alphen effect , fermi surface , electrical resistivity and conductivity , impurity , amplitude , residual resistivity , materials science , chemistry , physics , metallurgy , quantum mechanics , superconductivity
A recent theory for the effects of localized defects in metals on the amplitudes and the periods of the de Haas‐van Alphen oscillations is applied to point defects in copper. The parameters characterizing a defect in the employed model are fixed by means of the neutrality condition and the residual resistivity. The calculations of the Dingle temperatures and the changes in period are carried out for the most important extremal orbits on the Fermi surface of copper as given by Halse. The agreement with the available experimental data is satisfactory. The calculated changes in the de Haas‐van Alphen periods are shown to differ not very much from those obtained in the rigid‐band model.