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Hall scattering constant in n‐type silicon
Author(s) -
Retmann P. L.,
Walton A. K.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480114
Subject(s) - hall effect , condensed matter physics , silicon , constant (computer programming) , scattering , anisotropy , infrared , charge carrier , doping , physics , materials science , optics , electrical resistivity and conductivity , optoelectronics , quantum mechanics , computer science , programming language
The factor relating the Hall coefficient to carrier concentration has been determined in n‐type silicon by combining optical measurements of the carrier concentration at infrared frequencies with conventional dc Hall effect measurements. Interpreting this factor in terms of electronic charge, mobility anisotropy and the usual scattering constant, the latter is found to reach values much greater than unity, especially at 77 °K, when with a doping level of 2.6 × 10 17 cm −3 a value of 7.3 is obtained.