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Faraday rotation in amorphous CdGeAs 2
Author(s) -
Vorisek V.,
Zvára M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220480106
Subject(s) - faraday effect , amorphous semiconductors , amorphous solid , semiconductor , faraday cage , rotation (mathematics) , condensed matter physics , materials science , absorption edge , absorption (acoustics) , band gap , physics , optics , chemistry , optoelectronics , magnetic field , crystallography , mathematics , quantum mechanics , geometry
Results of Faraday rotation measurements in the region of the absorption edge of amorphous CdGeAs 2 , at room and liquid nitrogen temperatures are presented. Comparison with the BHL and HLN formulae for the Faraday rotation of crystalline semiconductors yields room‐temperature values of the energy gap of 1.22 and 1.32 eV, respectively. The results are discussed in terms of the generally accepted model of amorphous semiconductors, and the gaps obtained are tentatively assigned to the mobility gap.