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On the electrical resistivity by scattering on metallic grain boundaries
Author(s) -
van der Voort E.,
Guyot P.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220470211
Subject(s) - grain boundary , electrical resistivity and conductivity , scattering , tilt (camera) , condensed matter physics , residual resistivity , symmetry (geometry) , thermal conduction , materials science , electron , electron scattering , metal , geometry , physics , optics , composite material , metallurgy , mathematics , microstructure , quantum mechanics
The contribution to the residual electrical resistivity of high angle grain boundaries due to the scattering of conduction electrons by voids into the boundaries is calculated for Au, Cu, and Al. Two types of geometries are considered: array of cylindrical voids for symmetrical tilt boundaries and point voids for boundaries with lower symmetry. In both cases a self‐consistent potential, solution of a linearized Thomas‐Fermi equation, is used. This contribution, of about a few 10 −13 Ωcm 2 , accounts for at maximum 25% of the experimental specific grain boundary resistivity, which seems to indicate that bulk effects predominate.