Comments on the theory of photoionization of transition metal impurities in semiconductors | Zendy

Langer J. M. | Zendy

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Comments on the theory of photoionization of transition metal impurities in semiconductors

Author(s) -

Langer J. M.

Publication year - 1971

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220470209

Subject(s) - photoionization , impurity , semiconductor , mixing (physics) , crystal (programming language) , materials science , conduction band , electron , condensed matter physics , atomic physics , spectrum (functional analysis) , transition metal , shell (structure) , molecular physics , chemistry , physics , ion , optoelectronics , ionization , quantum mechanics , biochemistry , organic chemistry , composite material , computer science , programming language , catalysis

The shape of photoionization spectrum connected with removal of an electron from the 3d n shell of a transition metal impurity into the conduction band has been calculated. The influence of configurational mixing between 4p n and 3d n states on the shape of the spectrum is discussed. The absorption coefficient for uniaxial crystals (α for E ‖ c and E ⊥ c, c crystal axis) is given.

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