Premium
Comments on the theory of photoionization of transition metal impurities in semiconductors
Author(s) -
Langer J. M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220470209
Subject(s) - photoionization , impurity , semiconductor , mixing (physics) , crystal (programming language) , materials science , conduction band , electron , condensed matter physics , atomic physics , spectrum (functional analysis) , transition metal , shell (structure) , molecular physics , chemistry , physics , ion , optoelectronics , ionization , quantum mechanics , biochemistry , organic chemistry , composite material , computer science , programming language , catalysis
The shape of photoionization spectrum connected with removal of an electron from the 3d n shell of a transition metal impurity into the conduction band has been calculated. The influence of configurational mixing between 4p n and 3d n states on the shape of the spectrum is discussed. The absorption coefficient for uniaxial crystals (α for E ‖ c and E ⊥ c, c crystal axis) is given.