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Sulphur impurity state in Ga 1– x In x Sb
Author(s) -
Campos M. D'Olne,
Gouskov A.,
Gouskov L.,
Pons J.C.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220470116
Subject(s) - impurity , alloy , sulfur , conductivity , materials science , thermal conduction , analytical chemistry (journal) , conduction band , crystallography , metallurgy , chemistry , physics , electron , composite material , organic chemistry , quantum mechanics , chromatography
Hall effect and conductivity measurements show that in Ga 1– x In x Sb the position of the sulphur donor level depends on the alloy composition. This level is associated with subsidiary conduction bands in the alloy as well as in GaSb. The results are discussed and compared with those obtained by other workers from pressure experiments.