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Microwave Faraday Effect in Anisotropic n‐Type Silicon
Author(s) -
Srivastava G. P.,
Mathur P. C.,
Kumar A.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460235
Subject(s) - silicon , faraday effect , condensed matter physics , anisotropy , semiconductor , faraday cage , microwave , materials science , faraday rotator , physics , optoelectronics , optics , magnetic field , quantum mechanics
The theory of free carrier Faraday effect in anisotropic semiconductors, previously developed by Donovan and Webster [1,2], is extended to the case of n‐type silicon. The high‐frequency magnetoconductivity tensors are derived taking into account the detailed structure of conduction band. The Faraday rotation measurements in some [111] oriented samples of n‐silicon are performed at room temperature and microwave frequencies. These results and the results of previous workers with different orientation of silicon samples, show reasonable agreement with the theory.