Premium
Kinetics of Localized Exciton Recombination in CsI
Author(s) -
Lamatsch H.,
Rossel J.,
Saurer E.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460226
Subject(s) - exciton , recombination , divalent , kinetics , vacancy defect , cationic polymerization , absorption (acoustics) , chemistry , molecular physics , materials science , chemical physics , atomic physics , photochemistry , crystallography , condensed matter physics , physics , biochemistry , organic chemistry , quantum mechanics , gene , composite material
Two absorption peaks situated on the long‐wavelength tail of the excitonic bands in thick films and bulk crystals doped with divalent cations are reported. Calculations using a Born‐Haber cycle show that these peaks are due to excitons localized on cationic vacancy‐divalent cation complexes as previously proposed. The decay time of the corresponding emission is determined and the kinetics of localized exciton recombination is discussed.