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Electron Magnetic Susceptibility, Paramagnetic Resonance, and the Band Structure of Silicon‐Rich n‐Type Silicon–Germanium Alloys
Author(s) -
Geist D.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460126
Subject(s) - silicon , electron paramagnetic resonance , germanium , effective mass (spring–mass system) , materials science , paramagnetism , range (aeronautics) , electron , nuclear magnetic resonance , condensed matter physics , analytical chemistry (journal) , atomic physics , chemistry , physics , nuclear physics , metallurgy , quantum mechanics , chromatography , composite material
The lattice susceptibility appropriate to the silicon content has been subtracted from the total susceptibility. The remaining carrier contribution is dependent on the effective mass parameters and the g ‐value. Using g ≈ 2, extrapolated from measured electron paramagnetic resonance (EPR) values and assuming six ellipsoidal energy surfaces with K = m ∥/ m ⟂ = 4.68, the mass m ⟂ is found to be about m ⟂ = 0.27 m ( m free electron mass), a value lying close to that for silicon. This result indicates that the band structure as a whole in the neighbourhood of the Δ 1 minimum changes only slightly going from 100% silicon to the range between 80 and 65% silicon in silicon–germanium alloys.