Premium
Interaction of Rare Gas Interstitials with Lattice Defects in Sr‐doped Potassium Halides
Author(s) -
Felix F. W.,
Müller M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460124
Subject(s) - halide , doping , divalent , diffusion , irradiation , ionic conductivity , ion , chemistry , ionic bonding , lattice (music) , conductivity , potassium , oxygen , potassium bromide , inorganic chemistry , analytical chemistry (journal) , crystallography , materials science , electrode , thermodynamics , physics , optoelectronics , organic chemistry , chromatography , nuclear physics , acoustics , electrolyte
Results are presented on Ar diffusion in single crystals of Sr‐doped KF, KCI, KBr, and KI. Ar was homogeneously distributed in the crystals during a neutron irradiation by the reaction K‐41(n, p)Ar‐41. It was verified, that cation vacancies, which were introduced by the irradiation were annealed out when diffusion became detectable, i.e. above 200 °C. Any influence on gas diffusion could therefore be attributed to the divalent doping alone, that is to the consequently introduced cation vacancies. The concentration of these vacancies was determined by measuring the ionic conductivity. In the case of KF, KCI, and KBr but not in the case of KI the gas mobility was reduced with respect to the pure crystals. Thus, the cation vacancies seem to act as gas traps in KF, KCI, and KBr. These effects have been predicted by Norgett and Lidiard [3] on the basis of theoretical calculations of migration and binding energies of mobile Ar interstitials.