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Recombination of Impact Ionized Excess Carriers in Tellurium
Author(s) -
Bringer A.,
Nimtz G.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460121
Subject(s) - recombination , tellurium , superposition principle , charge carrier , ionization , trapping , atomic physics , carrier lifetime , impact ionization , microwave , charge carrier density , materials science , chemistry , physics , optoelectronics , silicon , ion , doping , ecology , biochemistry , organic chemistry , quantum mechanics , biology , metallurgy , gene
Abstract The recombination time of p‐type tellurium was measured dependent on carrier mobility and carrier density at 77 K. Excess carriers were produced by impact ionization in strong electric fields to achieve large excess carrier concentrations. The recombination of the excess carriers was observed by the help of microwaves, the rise time of the experimental apparatus was less than 5 × 10 −9 s. The experimental data can be interpreted as the superposition of a slow and a fast exponential decay. The results can be explained by an extended Shockley‐Read model. The energy level and the concentration of the trapping and recombination centers can be deduced from the experimental data.