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Interpretation of the Widths of SEM Electron Channelling Lines
Author(s) -
Schulson E. M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220460108
Subject(s) - channelling , atomic physics , excited state , electron , reciprocal lattice , physics , lattice (music) , cathode ray , optics , nuclear physics , ion , quantum mechanics , diffraction , acoustics
Abstract From a two beam approximation of the dynamical theory of the relative backscattered electron intensity as a function of direction of incidence, it is shown that the angular width of electron channelling lines on SEM images can be given by the expression: 2 ω g = 2/ξ g | g |, where ξ g and g are the extinction distance and the reciprocal lattice vector respectively of the strongly excited reflection. The expression is verified by comparing calculated line‐widths with measured widths from silicon as a function of incident beam energy and reflection excited. An appendix is given discussing quantitatively the degradation effects of beam divergence on electron channelling lines. It is suggested that line broadening might be a possible method for assessing lattice distortions.