Magnetic Pinch in n‐InSb

Equations governing the magnetic pinch in semiconductors are derived taking into account the exclusion principle for high plasma densities. The equations represent two non‐linear coupled integral equations, which have to be solved numerically. The plasma distribution, the density on the axis, the self‐magnetic field, and the current‐voltage characteristic are calculated for a specified n‐InSb sample. The axial plasma density is shown to be larger than the thermal density of the crystal at the melting temperature, suggesting a minor role for thermal carrier generation in a fully pinched semiconductor plasma.