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Hole mobility in trigonal Se x Te 1− x single crystals
Author(s) -
Mell H.,
Stuke J.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220450117
Subject(s) - trigonal crystal system , scattering , condensed matter physics , alloy , valence (chemistry) , valence band , electron mobility , materials science , crystallography , chemistry , band gap , crystal structure , physics , optics , metallurgy , organic chemistry
Abstract The weak‐field magnetoconductivity components σ 1111 , σ 1122 , and σ 1133 of trigonal Se‐Te mixed crystals have been measured in the temperature range 80 to 300 K. An analysis of these data yields the hole mobility in the alloys. The temperature dependence of the mobility and the comparison with theoretical mobility values indicate that alloy disorder scattering plays an important role in the SeTe system. From the strength of alloy scattering an approximate value of 0.2 eV is obtained for the difference between the valence band energies of Se and Te.