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Analysis of point defect states in copper. III. Interaction between copper interstitials and impurities
Author(s) -
Kraut A.,
Dworschak F.,
Wollenberger H.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220440240
Subject(s) - copper , impurity , materials science , vacancy defect , radius , crystallographic defect , condensed matter physics , crystallography , atomic physics , chemistry , metallurgy , physics , computer security , organic chemistry , computer science
The influence of impurities on the production of stable defects by electron irradiation at 80 °K has been studied in dilute alloys of copper with Ni, Mn, Au, Mg, or Sb. Using damage rate measurements the capture radii of the different impurities for freely migrating copper interstitials are determined with respect to the capture radius of the vacancy ( r t / r v ). The interstitial impurity interaction can quantitatively be accounted for by the continuum theory of elasticity.