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On the theory of optical interband transitions in the presence of resonance scattering
Author(s) -
Keiper R.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220440216
Subject(s) - valence (chemistry) , absorption edge , impurity , resonance (particle physics) , atomic physics , photon energy , absorption (acoustics) , conduction band , semiconductor , doping , scattering , attenuation coefficient , photon , valence band , chemistry , condensed matter physics , materials science , band gap , physics , optics , optoelectronics , organic chemistry , quantum mechanics , electron
The effect of resonance states on the behaviour of the density of states ϱ( E ) and the absorption coefficient α(ω) is studied for a doped semiconductor having a special band structure. It is shown that if the photon energy is higher than the absorption edge (ħ ω > E g ) characteristic thresholds and peaks appear in the absorption spectrum, the magnitude and position of which depend on the impurity concentration n , the energy E r , and the width Γ r of the resonance levels, the effective masses m v and m c of the valence and conduction bands.