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Generalized exchange interaction and Kondo effect
Author(s) -
Ganguly B. N.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220440205
Subject(s) - atom (system on chip) , character (mathematics) , condensed matter physics , kondo effect , impurity , coupling (piping) , exchange interaction , physics , electrical resistivity and conductivity , scattering , electron , fermi surface , degrees of freedom (physics and chemistry) , quantum mechanics , materials science , mathematics , geometry , ferromagnetism , computer science , metallurgy , embedded system
The internal degree of freedom of the impurity atom is taken into account in calculating the anomalous part of the resistivity leading to the Kondo effect. This is achieved by adopting a generalization of the usual s—d exchange interaction, first proposed by Vonsovskii and Svirskii. We find that, if the intra‐atomic exchange interaction is neglected, the logarithmically divergent character of the anomalous part of the resistivity is retained with an effective coupling strength. It is argued that the inclusion of the intra‐atomic exchange term may affect the logarithmically divergent character of the conduction electron scattering amplitude near the Fermi surface.