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On the deformation potential constant of the conduction band in InSb
Author(s) -
Tsidilkovskii I. M.,
Demchuk K. M.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220440130
Subject(s) - condensed matter physics , thermal conduction , constant (computer programming) , electron , effective mass (spring–mass system) , conduction band , semiconductor , scattering , deformation (meteorology) , band gap , electron mobility , doping , physics , materials science , chemistry , thermodynamics , quantum mechanics , meteorology , computer science , programming language
An analysis of experimental data for InSb is made and the deformation potential constant ϵ 1 of the conduction band is determined. It is shown that the correctly calculated value of |ϵ 1 | is about 30 eV. In the calculations of the carrier mobility for heavily doped semiconductors it is essential to take into account the effect of the band nonparabolicity on the transition probabilities and the screening of the scattering potentials by conduction electrons, and additionally at high temperatures it is necessary to consider the influence of electronphonon interaction on the effective mass and energy gap. The small values of |ϵ 1 | reported by some authors, who studied transport phenomena at low temperatures, are obtained under the condition ħ/τ > k B T (τ is the time between successive collisions), i.e. when the theory used is invalid.