Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si | Zendy

Asche M. | Zendy; Boichenko B. L. | Zendy; Bondar V. M. | Zendy; Sarbei O. G. | Zendy

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Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si

Author(s) -

Asche M.,

Boichenko B. L.,

Bondar V. M.,

Sarbei O. G.

Publication year - 1971

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220440117

Subject(s) - electron , electric field , anisotropy , electron scattering , condensed matter physics , scattering , conductivity , impurity , electron density , electrical resistivity and conductivity , materials science , range (aeronautics) , physics , optics , quantum mechanics , composite material

The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n‐Si at 77 °K. It is shown that the intervalley transfer of electron energy on account of electron‐electron interaction has to be included for carrier densities above 10 15 cm −3 in order to achieve a satisfactory description of the results obtained experimentally.

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