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Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si
Author(s) -
Asche M.,
Boichenko B. L.,
Bondar V. M.,
Sarbei O. G.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220440117
Subject(s) - electron , electric field , anisotropy , electron scattering , condensed matter physics , scattering , conductivity , impurity , electron density , electrical resistivity and conductivity , materials science , range (aeronautics) , physics , optics , quantum mechanics , composite material
Abstract The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n‐Si at 77 °K. It is shown that the intervalley transfer of electron energy on account of electron‐electron interaction has to be included for carrier densities above 10 15 cm −3 in order to achieve a satisfactory description of the results obtained experimentally.