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Infrared Modulation and Energy Band Parameters in Multivalley Semiconductors through Uniaxial Stress Dependence of Free Carrier Contribution to Optical Constants
Author(s) -
Walton A. K.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220430139
Subject(s) - semiconductor , anisotropy , free carrier absorption , infrared , relaxation (psychology) , materials science , effective mass (spring–mass system) , stress (linguistics) , modulation (music) , free carrier , wavelength , free electron model , reflection (computer programming) , condensed matter physics , optics , optoelectronics , physics , quantum mechanics , psychology , social psychology , linguistics , philosophy , computer science , acoustics , programming language , laser
Abstract The influence of uniaxial stress in 〈111〉 direction on the free carrier contribution to the optical constants of multivalley semiconductors is considered according to the electron transfer model. Calculations are made of the resulting change in absorption and shift of the wavelength for minimum reflection. It is shown that these effects may be large and experimental observation of them provides a method of determining the effective mass and relaxation time parameters and their anisotropies. The possibility of constructing infrared modulators based on these phenomena is also examined.