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Behaviour of Primary Defects in Electron‐Irradiated Germanium
Author(s) -
Bourgoin J.,
Mollot F.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220430136
Subject(s) - germanium , annealing (glass) , impurity , irradiation , electron beam processing , doping , materials science , vacancy defect , electron , kinetics , atomic physics , analytical chemistry (journal) , molecular physics , silicon , crystallography , chemistry , optoelectronics , metallurgy , physics , nuclear physics , chromatography , quantum mechanics , organic chemistry
An investigation is made of the influence of the free electron and donor impurity concentrations on the annealing kinetics of the 35 and 65 °K stages and on the creation rate of the 35 °K stage, in low temperature electron irradiated n‐type Germanium, using As‐ or Sb‐doped samples, Ga and Cu compensated samples, and a Li‐doped sample. The results obtained allow to conclude that the mobility of the Ge interstitial occurs at 4.5, 27, and 65 °K, depending on its charge state and the mobility of the vacancy at 90 °K, and to identify the defect associated with the 35 °K stage as a vacancy‐interstitial pair where the interstitial is a donor impurity (annealing through the interstitial mobility). This interstitial mobility, strongly dependent on the charge state, explains radiation annealing and the behaviour of irradiated p‐type Germanium.