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Transport Phenomena in Nonparabolic Semiconductors at High Electric Fields
Author(s) -
Dubey P. K.,
Chakravarti A. K.
Publication year - 1971
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220430109
Subject(s) - condensed matter physics , boltzmann equation , indium antimonide , electric field , magnetic field , distribution function , anisotropy , momentum (technical analysis) , isotropy , effective mass (spring–mass system) , physics , phonon , electron , thermal conduction , electrical resistivity and conductivity , scattering , quantum mechanics , finance , economics
Galvano‐ and thermo‐magnetic transport coefficients have been calculated for an n‐type nondegenerate sample of indium antimonide at high electric fields at temperatures 300 °K and above. The isotropic and anisotropic parts of the distribution function have been obtained from the Boltzmann transport equation in a relaxation time model, using the appropriate high‐field collision term for a nondegenerate sample given by Matz [1]. Electron scattering by polar optical phonons and ionized impurities have been chosen as the responsible mechanisms for the energy and momentum losses. The nonparabolicity of the conduction band has been accounted for by Kane's model. It is seen from a numerical evaluation of the results that the electrical conductivity exhibits a typical behaviour of reversal with the magnetic field below 300 °K and above fields ≈ 200 V/cm. The results have been compared with earlier theoretical and available experimental results at 77 °K, and important features of the comparison have been discussed in the last section.