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The Fundamental Absorption Edge of Doped CdS Single Crystals
Author(s) -
Brodin M. S.,
Vitrikhovskii N. I.,
Kurik M. V.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220100215
Subject(s) - absorption edge , enhanced data rates for gsm evolution , absorption (acoustics) , doping , exciton , valence (chemistry) , materials science , valence band , wavelength , absorption spectroscopy , molecular physics , chemistry , crystallography , condensed matter physics , atomic physics , band gap , optics , optoelectronics , physics , telecommunications , organic chemistry , computer science , composite material
An investigation is made of the fundamental absorption edge of single crystals of CdS at 300, 77, and 20.4 °K. The crystals have In and Ga donors, and Cu and Ag acceptors. It is shown that for donor concentrations between 10 18 and 10 19 cm −3 the absorption edge is shifted towards longer wavelengths. The acceptors do not lead to any changes in the absorption edge. The shift of the absorption edge by the donors and its effect on the exciton spectrum is discussed. The effect is thought to be associated with the deformation of the valence band and the formation of the “tail” of the density of states.