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Proton Energy Loss in GaN
Author(s) -
Duboz Jean-Yves,
Zucchi Julie,
Frayssinet Eric,
Chenot Sébastien,
Hugues Maxime,
Grini Jean-Claude,
Hérault Joël
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202100167
Subject(s) - proton , cyclotron , range (aeronautics) , schottky diode , detector , energy (signal processing) , materials science , absorption (acoustics) , beam (structure) , atomic physics , physics , diode , optoelectronics , nuclear physics , optics , plasma , quantum mechanics , composite material
The proton energy loss in GaN in an energy range between 0 and 65 MeV is investigated. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy‐absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to demonstrate that the energy absorption loss in GaN precisely follows the Bethe theory. In addition, the region of the detector contributing to its response to a proton beam, which is of prime importance for proton detector optimization, can be identified.