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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method
Author(s) -
Tanaka Atsushi,
Inotsume Syo,
Harada Shunta,
Hanada Kenji,
Honda Yoshio,
Ujihara Toru,
Amano Hiroshi
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202070021
Subject(s) - birefringence , dislocation , enhanced data rates for gsm evolution , contrast (vision) , materials science , plane (geometry) , optics , substrate (aquarium) , glide plane , orientation (vector space) , crystallography , condensed matter physics , geometry , mathematics , physics , composite material , chemistry , geology , artificial intelligence , computer science , oceanography
The back cover shows a retardation image of c‐plane GaN substrate having dislocation density of 10 3 cm –2 taken with a birefringence microscope, as presented by Atsushi Tanaka and co‐workers in article number 1900553 . Strain around dislocations appears as contrast in the image. From this contrast, it can be determined to which direction the edge component of the dislocation is oriented. The table below shows the correspondence between the direction of extra half plane of edge component and the contrast. All six equivalent < 11 2 ¯ 0 > edge components are found in this image.