Premium
A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width
Author(s) -
Chun Jaeyi,
Li Siwei,
Malakoutian Mohamadali,
Ji Dong,
Chowdhury Srabanti
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202070013
Subject(s) - transistor , ohmic contact , static induction transistor , materials science , schottky barrier , fin , schottky diode , optoelectronics , voltage , field effect transistor , electrical engineering , nanotechnology , engineering , layer (electronics) , diode , composite material
The Schottky‐barrier static induction transistor (SIT) does not require any p‐type materials and gate dielectrics for its operation, providing a straightforward way to develop GaN‐based high‐frequency power devices. The first derivative of output curves of a Schottky‐junction vertical channel GaN SIT with sub‐micrometer‐sized fin was studied by Jaeyi Chun et al. at Stanford WBG‐Lab (article number 1900545 ) to understand its fundamental electrical properties. The derivative of output curves increases as a function of drain voltage in ohmic region due to the raised potential minima in the channel, which has not been seen in SITs with relatively long fin width.