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Solution‐Grown Hypervalent CsI 3 Crystal for High‐Sensitive X‐Ray Detection
Author(s) -
Zhang Bin-Bin,
Liu Xin,
Xiao Bao,
Gao Kaige,
Dong Song-Tao,
Xu Yadong,
He Yucong,
Zhou Jian,
Jie Wanqi
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202070012
Subject(s) - hypervalent molecule , bin , x ray , crystal (programming language) , electrical resistivity and conductivity , semiconductor , band gap , materials science , single crystal , photon , atomic physics , analytical chemistry (journal) , crystallography , chemistry , physics , optoelectronics , optics , metallurgy , mathematics , computer science , iodine , algorithm , quantum mechanics , chromatography , programming language
A novel hypervalent CsI 3 single crystal is grown from solution, as reported in article number 1900290 by Bin‐Bin Zhang and co‐workers. This is a semiconductor with a large average atomic numbers (Z = 53.5), large density (4.47 g cm ‒3 ), proper band gap of 1.79 eV, and high resistivity of 3.2 × 10 9 Ω cm. This material can be applied for high performace direct X‐ray photon conversion at room temperature.