Premium
Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization
Author(s) -
Jacopin Gwénolé,
Frankerl Christian,
Tillner Nadine,
Davies Matthew John,
Rossbach Georg,
Brandl Christian,
Hoffmann Marc Patrick,
Zeisel Roland,
Hoffmann Axel,
Lugauer Hans-Jürgen
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000464
Subject(s) - cathodoluminescence , photoluminescence , epitaxy , materials science , metalorganic vapour phase epitaxy , quantum efficiency , optoelectronics , sapphire , substrate (aquarium) , quantum well , light emitting diode , dislocation , diode , luminescence , optics , nanotechnology , laser , physics , composite material , layer (electronics) , oceanography , geology
The influence of the growth substrate on the internal quantum efficiency (IQE) of deep ultraviolet light‐emitting diodes is studied. Two nominally identical Al‐rich AlGaN/AlN multi‐quantum‐well (MQW) structures grown by metal–organic vapor phase epitaxy (MOVPE) on different substrates are investigated. The first MQW structure is grown on a native AlN substrate, whereas the second one is deposited on an AlN template on sapphire. By the combination of atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence (CL) spectroscopy, it is demonstrated that the dislocation‐mediated spiral growth of MQWs on sapphire results in the more efficient localization of carriers. This effect helps to prevent nonradiative carrier recombination at point defects, improving the IQE of the structure.