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Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth
Author(s) -
Alcer David,
Saxena Aditya P.,
Hrachowina Lukas,
Zou Xianshao,
Yartsev Arkady,
Borgström Magnus T.
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000400
Subject(s) - trimethylgallium , triethylgallium , trimethylindium , dopant , metalorganic vapour phase epitaxy , diethylzinc , materials science , photoluminescence , nanowire , analytical chemistry (journal) , doping , chemistry , chemical engineering , nanotechnology , optoelectronics , epitaxy , catalysis , organic chemistry , layer (electronics) , enantioselective synthesis , engineering
Nanowire (NW) arrays containing a top segment of Ga x In 1– x P are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle‐assisted vapor–liquid–solid (VLS) growth of Ga x In 1– x P NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time‐resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p‐type dopant diethylzinc (DEZn) on the NW composition, observed for Ga x In 1– x P NWs grown using TMGa, is absent when using TEGa.