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Structural and Elastic Properties of α‐(Al x Ga 1− x ) 2 O 3 Thin Films on (11.0) Al 2 O 3 Substrates for the Entire Composition Range
Author(s) -
Hassa Anna,
Storm Philipp,
Kneiß Max,
Splith Daniel,
von Wenckstern Holger,
Lorenz Michael,
Grundmann Marius
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000394
Subject(s) - thin film , corundum , pulsed laser deposition , materials science , sapphire , lattice constant , epitaxy , analytical chemistry (journal) , crystallography , diffraction , x ray crystallography , substrate (aquarium) , crystal structure , fabrication , optics , nanotechnology , laser , chemistry , metallurgy , physics , medicine , oceanography , alternative medicine , layer (electronics) , chromatography , pathology , geology
Structural properties of rhombohedral α‐(Al x Ga 1− x ) 2 O 3 thin films grown by two combinatorial pulsed laser deposition (PLD) techniques are investigated for the entire composition range. One α‐(Al x Ga 1− x ) 2 O 3 thin film is deposited on a 2 inch in diameter large a‐plane sapphire substrate using the continuous composition spread (CCS) PLD technique to fabricate a thin film with varying Al content ranging between x = 0.13 and x = 0.84. Laterally homogeneous α‐(Al x Ga 1− x ) 2 O 3 thin films exhibiting discrete Al contents are fabricated using radially segmented PLD targets on (11.0) Al 2 O 3 . Independent of the PLD technique, for x ≈ 0.55, a change from relaxed to pseudomorphic growth is observed as confirmed by the evolution of in‐ and out‐of‐plane lattice constants. The crystal structure is studied depending on the cation composition by X‐ray diffraction confirming the fabrication of epitaxial, corundum‐structured thin films.