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The Electronic Properties of Chlorine in GaN: An Ab Initio Study
Author(s) -
Fujii Yusuke,
Micheletto Ruggero,
Alfieri Giovanni
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000303
Subject(s) - ohmic contact , chlorine , dopant , materials science , ab initio , impurity , density functional theory , vacancy defect , semiconductor , ion , etching (microfabrication) , computational chemistry , chemical physics , optoelectronics , doping , chemistry , nanotechnology , crystallography , metallurgy , organic chemistry , layer (electronics)
Chlorine‐based reactive ion etching (RIE) is a fundamental processing step for the manufacturing of GaN semiconductor devices. As impurities can be unintentionally incorporated in the crystal during processing, the electronic properties of chlorine in GaN are investigated. Density functional theory calculations of substitutional Cl and related complexes (with a vacancy or a dopant) are carried out. It is found that Cl and its complexes explain the reported effects of Cl RIE‐treated GaN on hole density and ohmic contact resistivity.