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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet
Author(s) -
Yin Xue,
Zhao Songrui
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000287
Subject(s) - molecular beam epitaxy , ultraviolet , optoelectronics , materials science , lasing threshold , heterojunction , wafer , epitaxy , gallium nitride , optics , layer (electronics) , physics , wavelength , nanotechnology
In this work, the optical quality and stimulated emission of aluminum gallium nitride (AlGaN)/AlN double heterostructure grown by molecular beam epitaxy in the deep ultraviolet (UV) are reported. The room temperature internal quantum efficiency at a carrier density of 1 × 10 18 cm −3 is around 12%, mainly limited by dislocations. For such as‐grown wafers, spectral narrowing and nonlinearity of the light output are measured from the wafer edge, with the transverse‐electric (TE)‐polarized component becoming dominant as the excitation increases. With cleaving, edge‐emitting lasing at 298 nm is measured, with an estimated threshold of 0.95 MW cm −2 .