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The Splitting of Electron States in Ge/Si Heterostructure with Germanium Quantum Dots
Author(s) -
Pokutnyi Sergey I.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000221
Subject(s) - germanium , quantum dot , heterojunction , silicon , quantum tunnelling , electron , materials science , exciton , condensed matter physics , molecular physics , optoelectronics , chemistry , physics , quantum mechanics
It is shown that electron tunneling through a potential barrier that separates two quantum dots (QDs) of germanium leads to the splitting of electron states localized over spherical interfaces (QD–silicon matrix). The dependence of the splitting values of the electron levels on the parameters of the nanosystem (the radius a of germanium QDs, as well as the distance D between the surfaces of the QDs) is obtained. It is shown that, the splitting of electron levels in the QD chain of germanium causes the appearance of a zone of localized electron states, which is located in the bandgap of silicon matrix. It is found that the motion of a charge‐transport exciton along a chain of QDs of germanium causes an increase in photoconductivity in the nanosystem.