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Electrical Transport Properties of Vanadium‐Doped Bi 2 Te 2.4 Se 0.6
Author(s) -
Riha Christian,
Düzel Birkan,
Graser Karl,
Chiatti Olivio,
Golias Evangelos,
Sánchez-Barriga Jaime,
Rader Oliver,
Tereshchenko Oleg E.,
Fischer Saskia F.
Publication year - 2021
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.202000088
Subject(s) - van der pauw method , vanadium , electrical resistivity and conductivity , condensed matter physics , magnetoresistance , materials science , angle resolved photoemission spectroscopy , doping , hall effect , photoemission spectroscopy , electron mobility , weak localization , x ray photoelectron spectroscopy , electronic structure , physics , nuclear magnetic resonance , quantum mechanics , magnetic field , metallurgy
Vanadium‐doped Bi 2– x Te 2.4 Se 0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van‐der‐Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 10 16 cm −3 and mobilities as high as 570 cm 2 V −1 s −1 . As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase‐coherence lengths of up to 250 nm for x = 0.015.