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Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires (Phys. Status Solidi B 5/2019)
Author(s) -
Lancaster Suzanne,
Andrews Aaron Maxwell,
StoegerPollach Michael,
SteigerThirsfeld Andreas,
Groiss Heiko,
Schrenk Werner,
Strasser Gottfried,
Detz Hermann
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201970021
Subject(s) - nanowire , boron , transmission electron microscopy , materials science , molecular beam epitaxy , crystallographic defect , electron beam lithography , nanotechnology , optoelectronics , epitaxy , crystallography , chemistry , resist , layer (electronics) , organic chemistry
The incorporation of boron in GaAs nanowires grown by molecular beam epitaxy was found to lead to the formation of boron‐rich regions at the nanowire surface. Such nanowires were investigated structurally via transmission electron microscopy (TEM) and electron energy‐loss spectroscopy, as well as electrically via two‐point and back‐gated measurements on single nanowires contacted by electron beam lithography. The cover image shows the results of the structural and electrical investigation, with a back‐gated curve, showing p‐type behavior, overlaid on a TEM image where boron‐rich clusters are visible. Since boron is known to act as a doubly‐charged acceptor when incorporated on As lattice sites, the presence of p‐type carriers indicated that there were indeed antisite defects alongside isovalent boron atoms on the Ga lattice sites. Furthermore, there is a visible hysteresis due to the large presence of surface states and measuring under ambient conditions. For further details, see article no. 1800368 by Suzanne Lancaster et al., belonging to the Special Section on “Defect‐Induced Effects in Nanomaterials”, guest‐edited by Nikolai Sobolev, Flyura Djurabekova, and Eugene Kotomin (cf. the Preface, article no. 1900181 ).