Dynamics and Interactions of Semiconductor Nanowires for Optoelectronics (Phys. Status Solidi B 4/2019)

In a series of 11 articles, reports of the DFG Research Unit “Dynamics and Interactions of Semiconductor Nanowires for Optoelectronics” (FOR 1616) are presented in this Special Issue. Some of the topics are illustrated on the cover: p–n junctions in GaN microrods have been realized using metal‐organic vapor phase epitaxy by Tessarek et al., article no. 1800452 (top left figure); the surfaces of such microrods and nanowires out of different materials have been successfully functionalized and hybridized with optical active quantum dots by Voss et al., article no. 1800463 (top right figure) and Waldvogel et al., article no. 1800493 . Further coating schemes for nanowires have been developed in order to obtain Bragg reflectors, and the nonlinear propagation of short light pulses in this strong coupling regime has been studied both experimentally (Schmidt‐Grund et al., article no. 1800462 ) and theoretically (Egorov et. al., article no. 1800729 , bottom right figure). Successful doping of single nanowires with optical active centers has been realized via ion implantation, and the resulting atomic structure was modelled via density functional theory by Röder et al., article no. 1800604 (bottom left). Not only these examples, but all other groups reporting in this special issue successfully contributed to the central vision of the Research Unit.