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Localized Photoluminescence Imaging of Bi‐Layered Cuprous/Cupric Oxide Semiconductor Films by Synchrotron Radiation (Phys. Status Solidi B 3/2019)
Author(s) -
Kobayashi Masakazu,
Izaki Masanobu,
Shinagawa Tsutomu,
Takeuchi Akihisa,
Uesugi Kentaro
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201970018
Subject(s) - photoluminescence , materials science , semiconductor , microstructure , optoelectronics , synchrotron radiation , synchrotron , optics , composite material , physics
To develop multi‐layered semiconductor film devices, like a solar cell device, effects of localized impurities and layered interface mismatches on photovoltaic properties should be investigated quantitatively. Masakazu Kobayashi et al. (article no. 1800119 ) conducted an experiment measuring the spatial distribution of photoluminescence in CuO/Cu 2 O bi‐layered films as the first step to the goal that clarifies localized photoluminescence affected by inhomogeneous (heterogeneous) microstructures in multi‐layered semiconductors. By utilizing focused X‐ray, intensity mapping of light emission depending on energy was devised. The maps correspond to the layered microstructure of as‐deposited and annealed films correctly. If a further small focused beam is utilized, detailed spatial distribution of photoluminescence would be feasible to be analyzed, though there is trade‐off with spectrum collection time. By utilizing this non‐destructive inspection method, investigations of not only spatial distribution but also change depending on time seem to become possible in complex layered film structures.